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| TEMD1000 Vishay Telefunken Silicon PIN Photodiode Description TEMD1000 is a high speed silicon PIN photodiode molded in SMT package with dome lens. Due to its integrated Daylight filter the device is sensitive for IR radiation only. High on axis sensitivity is provided by a viewing angle of 15. Features D D D D D D Extra fast response times Radiant sensitive area A=0.25mm2 Daylight filter SMD with terminals Z-bend Especially for surface mounting on printed board Angle of half sensitivity = 15 15 970 Applications High speed detector for SMT IR Detector for Daylight application Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Soldering Temperature Test Conditions Tamb Symbol VR PV Tj Tstg Tstg Tsd Value 60 75 100 -40...+85 -40...+85 260 Unit V mW C C C C x 25 C t x5s Document Number 81564 Rev. 5, 17-Feb-00 www.vishay.de * FaxBack +1-408-970-5600 1 (5) TEMD1000 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Reverse Light Current Test Conditions IF = 50 mA IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 5 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 870 nm, VR = 5 V Ee = 1 mW/cm2, l = 950 nm, VR = 5 V VR = 5 V, l = 870 nm VR = 5 V, l = 870 nm VR = 5 V, l = 950 nm Symbol VF V(BR) Iro CD Ira Ira TKIra s(l) s(l) Min 60 1 1.8 10 5 12 0.2 0.60 0.55 15 900 840...1050 4 4 10 Typ 1.0 Max 1.3 Unit V V nA pF mA mA Temp. Coefficient of Ira Absolute Spectral Sensitivity y Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Rise Time VR = 10 V, RL = 50 W, l = 820 nm Fall Time VR = 10 V, RL = 50 W, l = 820 nm lp l0.5 tr tf %/K A/W A/W deg nm nm ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) I ra rel - Relative Reverse Light Current 1000 I ro - Reverse Dark Current ( nA ) 1.4 1.2 100 l=950nm VR=5V 1.0 10 0.8 VR=10V 1 20 40 60 80 100 0.6 0 94 8416 20 40 60 80 100 94 8427 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 81564 Rev. 5, 17-Feb-00 TEMD1000 Vishay Telefunken S ( l ) rel - Relative Spectral Sensitivity 10 12786 100 Ira - Reverse Light Current ( m A ) 1.2 1.0 0.8 0.6 0.4 0.2 0 750 10 1.0 VR=5V l=950nm 0.1 0.01 16055 0.1 1 850 950 1050 1150 Ee - Irradiance ( mW / cm2 ) l - Wavelength ( nm ) Figure 3. Reverse Light Current vs. Irradiance 8 CD - Diode Capacitance ( pF ) Figure 5. Relative Spectral Sensitivity vs. Wavelength 0 10 20 30 6 E=0 f=1MHz 4 S rel - Relative Sensitivity 40 1.0 0.9 0.8 0.7 50 60 70 80 2 0 0.1 94 8430 1 10 100 94 8248 0.6 0.4 0.2 0 0.2 0.4 0.6 VR - Reverse Voltage ( V ) Figure 4. Diode Capacitance vs. Reverse Voltage Figure 6. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81564 Rev. 5, 17-Feb-00 www.vishay.de * FaxBack +1-408-970-5600 3 (5) TEMD1000 Vishay Telefunken Dimensions in mm 16159 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 81564 Rev. 5, 17-Feb-00 TEMD1000 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81564 Rev. 5, 17-Feb-00 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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